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02010 TDA8375 EBE21U C74LVX P4KE27 M5913B1 TS8MED 18F45K
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  savantic semiconductor product specification silicon npn power transistors 2SD612 2SD612k description with to-126 package complement to type 2sb632/632k high collector dissipation wide area of safe operation applications 25v/35v, 2a low-frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SD612 25 v cbo collector-base voltage 2SD612k open emitter 35 v 2SD612 25 v ceo collector-emitter voltage 2SD612k open base 35 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 2 a i cm collector current-peak 3 a t a =25 1 p d total power dissipation t c =25 10 w t j junction temperature 150  t stg storage temperature -55~150 
savantic semiconductor product specification 2 silicon npn power transistors 2SD612 2SD612k characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SD612 25 v (br)ceo collector-emitter breakdown voltage 2SD612k i c =1ma; r be = ; 35 v 2SD612 25 v (br)cbo collector-base breakdown voltage 2SD612k i c =10a ;i e =0 35 v v (br)ebo emitter-base breakdown voltage i e =10a ;i c =0 5 v v cesat collector-emitter saturation voltage i c =1.5a ;i b =0.15a 0.3 0.8 v v besat base-emitter saturation voltage i c =1.5a ;i b =0.15a 1.1 1.5 v i cbo collector cut-off current v cb =20v; i e =0 1 a i ebo emitter cut-off current v eb =4v; i c =0 1 a h fe-1 dc current gain i c =0.5a ; v ce =2v 60 320 h fe-2 dc current gain i c =1.5a ; v ce =2v 30 f t transition frequency i c =50ma ; v ce =10v 100 mhz c ob collector output capacitance f=1mhz ; v cb =10v 30 pf switching times t on turn-on time 0.05 s t f fall time 0.10 s t stg storage time i c =500ma ; v ce =12v i b1 =-i b2 =50ma 0.40 s  h fe-1 classifications d e f 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2SD612 2SD612k package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2SD612 2SD612k


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